Title:
スパッタリングターゲットとそれを用いたAl配線膜の製造方法および電子部品の製造方法
Document Type and Number:
Japanese Patent JP4197579
Kind Code:
B2
Abstract:
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20x20 mum. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
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Inventors:
Koichi Watanabe
Takashi Ishigami
Takashi Ishigami
Application Number:
JP2000526677A
Publication Date:
December 17, 2008
Filing Date:
December 24, 1998
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23C14/34; B22C1/00; C22C21/00; C22C21/02; C22C21/04; C22C21/12; C22C21/14; C22C27/00; C22F1/00; C22F1/04; C23C14/32; H01L21/203; H01L21/285; H01L21/3205; H01L21/768; H01L23/12; H01L23/532
Domestic Patent References:
| JP8037003A | ||||
| JP6346171A | ||||
| JP4055144B2 | ||||
| JP8037186A |
Foreign References:
| WO1997013885A1 |
Attorney, Agent or Firm:
Saichi Suyama
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