To provide a sputtering target, a manufacturing method for a substrate with a multi-layered reflecting film, a manufacturing method for a reflection type mask blank, and a manufacturing method for a reflection type mask, respectively.

The sputtering target consists of ruthenium compound containing ruthenium (Ru) and at least one selected from niobium (Nb), molybdenum (Mo), zirconium (Zr), titanium (Ti), lanthanum (La), silicon (Si), boron (B), and yttrium (Y). The sintering density is ≥ 95%, the content of oxygen (O) is ≤ 2,000 ppm, and the content of carbon (C) is ≤ 200 ppm. A substrate 30 with a multi-layered reflecting film is obtained by depositing a ruthenium compound protective film 6 on a multi-layered reflecting film 2 on a substrate 1 by using the target. A reflection type mask blank is obtained by forming an absorbing medium on the ruthenium compound protective film 6 of the substrate 30 with the multi-layered reflecting film. Further, a reflection type mask is obtained by forming a pattern on the absorbing medium of the reflection type mask blank.