To obtain a sputtering target capable of stably forming a high quality ZnS- SiO2 type protective film with high efficiency by providing a composition consisting of ZnS and SiO and also regulating the content ratio of zinc oxide, Zn(OH)2, and ZnCO3 to ZnS.
A ZnS powder and an SiO2 powder are mixed at a mole ratio of about 4:1, and the resultant powder mixture is compacted and then burnt in vacuum, and the resultant burnt part is ground into prescribed dimensions in the air atmosphere of ≤60% relative humidity or in the atmosphere of nitrogen, argon gas, etc. By this procedure, the content ratio of ZnO2-x (where 0≤x<2), Zn(OH)2, and ZnCO3 to ZnS is regulated so that, when evaluated by the compound peak integrated intensity by ESCA, the integrated intensity ratio of [ZnO2-x+Zn(OH)2+ZnCO3]/ZnS is regulated to ≤1, and also the depth where the integrated intensity ratio takes a value of 1 is limited to the range of $30 μm from the surface, and further, C content is regulated to ≤7 atomic %. By this method, the target material, capable of forming a protective film with superior reproducibility can be obtained in a short presputter time at high sputter rate.
TEZUKA KAZUMASA
NAGATA CHOJU
ISHIKAWA YUICHI
SENOO KAZUHIRO
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