Title:
SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
Document Type and Number:
Japanese Patent JP2018188726
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide, for example, a target suitable for depositing a soft magnetic film of a heat assist magnetic recording medium; and to provide a production method thereof, capable of suppressing crack of the target.SOLUTION: In a sputtering target, a compositional formula in terms of the atomic ratio is Fe-Cu-Si-M, 0.1≤a≤5.0, 10.0≤b≤20.0, 10.0≤c≤25.0, where M shows one or more kinds of elements selected from Nb and B, and a residue comprises inevitable impurities, and a transverse rupture strength is 500 MPa or higher, and preferably, the number of Fe phases having an inscription circle diameter of 1 μm or more is smaller than 1.0 per 60,000 μm.SELECTED DRAWING: Figure 1
Inventors:
YAKABE HIDETAKA
FUKUOKA ATSUSHI
SAKAMAKI KOICHI
SOGAME HIROAKI
FUKUOKA ATSUSHI
SAKAMAKI KOICHI
SOGAME HIROAKI
Application Number:
JP2018016445A
Publication Date:
November 29, 2018
Filing Date:
February 01, 2018
Export Citation:
Assignee:
HITACHI METALS LTD
International Classes:
C23C14/34; B22F3/15; C22C38/00; C22C38/16; G11B5/851; H01F10/14