Title:
スパッタリングターゲット構造体およびスパッタリングターゲット構造体の製造方法
Document Type and Number:
Japanese Patent JP6755802
Kind Code:
B2
Abstract:
The present invention reduces particles. This sputtering target structure is provided with a sputtering target, and a backing plate that holds the sputtering target. The surface of the sputtering target and/or the surface of the backing plate is provided with a region including a plurality of recesses having an average diameter of 50-300 μm, and an average depth of 5-30 μm. The arithmetic average roughness Ra of the surface of the region including the recesses is 10-20 μm.
Inventors:
Toru Komatsu
Nobuaki Nakajima
Nobuaki Nakajima
Application Number:
JP2016551537A
Publication Date:
September 16, 2020
Filing Date:
September 29, 2015
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Materials Co., Ltd.
Toshiba Materials Co., Ltd.
International Classes:
C23C14/34; C23C4/08; C23C4/129; C23C4/131; C23C4/134
Domestic Patent References:
| JP2001247957A |
Foreign References:
| WO2008117482A1 | ||||
| WO2002040733A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office