Title:
薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
Document Type and Number:
Japanese Patent JP4783525
Kind Code:
B2
Abstract:
Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to obtain the thin film aluminum alloy having a Vickers hardness of 30 Hv or less and a film stress (absolute value indication) of 30 kg/mm<2 >or less when performing annealing treatment at a temperature ranging from 25° C. to 500° C., wherein said hardness and said film stress are distributed in a predetermined hardness range and in a predetermined film stress range respectively within the temperature range of the above-mentioned annealing treatment and are respectively almost constant against annealing temperature, the thin film aluminum alloy being formed as a film on a substrate by a sputtering method using a sputtering target having a composition comprising 0.5 to 15 atom % of one or more types selected from Ag, Cu, Mg and Zn and 0.01 to 5 atom % of one or more types selected from Co, Cr, Gd, Hf, Li, Mn, Mo, Nb, Nd, Ni, Pd, Pt, Ru, Sc, Sr, Ta, Ti, W, Y and Zr, and, as remnant, Al and unavoidable impurities.
Inventors:
Junichiro Hagiwara
Tokuda Ichiro
Tokuda Ichiro
Application Number:
JP2001263085A
Publication Date:
September 28, 2011
Filing Date:
August 31, 2001
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C23C14/14; G02F1/1343; C22C21/00; C22C21/18; C22F1/04; C23C14/34; H01L21/28; H01L21/285; H01L23/498; H01L23/532; G02F1/1362
Domestic Patent References:
| JP2274008A | ||||
| JP11258625A | ||||
| JP3096699B2 |
Other References:
R. SPOLENAK et al.,Effects of alloying elements on electromigration,Microelectronics Reliability,1998年,Vol. 38,p.1015-1020
Attorney, Agent or Firm:
Yoshihiro Shimizu
Shinichi Abe
Yuji Tsujida
Etsuo Machida
Masashi Yoshioka
Shinichi Abe
Yuji Tsujida
Etsuo Machida
Masashi Yoshioka