Title:
SPUTTERING TARGET FOR THIN FILM FORMATION AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2014077187
Kind Code:
A
Abstract:
To provide a sputtering target with which DC sputtering can be performed and the O amount is stably controlled in depositing a targeted thin film including Bi-Ge-O as main components.
A sputtering target is produced by pressure-sintering mixed powders, which are obtained by blending and mixing oxide powders and Bi metal powders, at a temperature below Bi melting point. In the target, the Bi metal is softened to form base material and oxides are dispersed and distributed.
Inventors:
KATO SHINJI
SAITO ATSUSHI
SAITO ATSUSHI
Application Number:
JP2012226855A
Publication Date:
May 01, 2014
Filing Date:
October 12, 2012
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; B22F1/00; B22F3/10; C22C1/05; C22C1/10; C22C12/00; C22C28/00; C22C32/00
Domestic Patent References:
| JP2009170065A | 2009-07-30 | |||
| JP2007169779A | 2007-07-05 |
Attorney, Agent or Firm:
Kageyama Shuichi
Masayuki Miyake
Kurachi Yasuyuki
Kazuo Tomita
Masayuki Miyake
Kurachi Yasuyuki
Kazuo Tomita
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