Title:
SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2000064033
Kind Code:
A
Abstract:
To develop and provide a new stock of Mo-Al and W-Al alloy sputtering targets small in the generation of problems by paying attention to high m.p. metal as a countermeasure against hillocks and voids.
In a sputtering target composed of an Mo-Al alloy or a W-Al alloy obtd. by adding 3 to 10 mass% Mo or W to aluminum(Al), the content of oxygen is ≤100 ppm, the Mo-Al alloy has at least one kind of compd. among MoAl12, MoAl5, MoAl4, Mo3Al8, MoAl and Mo3Al as the intermetallic compds. of Mo and Al, the W-Al alloy has at least one kind of compd. among WAl12, WAl5 and WAl4 as the intermetallic compds. of W and Al, and the intermetallic compds. are uniformly dispersed at ≥98% mass density ratio.
Inventors:
SON SHIYOURIYUU
Application Number:
JP23316098A
Publication Date:
February 29, 2000
Filing Date:
August 19, 1998
Export Citation:
Assignee:
TOKYO TUNGSTEN KK
International Classes:
C22C32/00; C22C21/00; C23C4/08; C23C14/34; (IPC1-7): C23C14/34; C22C21/00; C22C32/00; C23C4/08
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)