PURPOSE: To increase a film forming amount per unit time, by forming a sputtering targed into a U-shape having an opening part directed to an object to be coated and arranging magnets to both sides of said target.
CONSTITUTION: The target 1 in a sputtering apparatus is formed into a U-shape from side plates 4 and a bottom plate 5 and the opening part 1a thererof is directed to a substrate 3 to which a sputtering film is formed. In addition, a W tilament is attached to one end in the target 1 and anode plate 12 to the opposite side therein while magnets 2 each having a yoke are attached to the outer sides of said target 1. The substrate 3 is used as an anode and the target 1 is used as a cathode to apply voltage of 500W1,000V therebetween while a current is supplied to the filament to apply voltage between said filament and the anode plate 12. Glow discharge is generated between the target 1 and the substrate 3 and the molecule of the target 1 is generated but glow discharge is promoted by the thermoelectron from the filament and a large amount of the target molecules are uniformly collided with the substrate 3 by the restriction of the side plates 4 and the magnetic field due to the magnets 2 to form a vapor deposition film having a uniform thichkness at a high speed.
SUMIYAMA MIHIRO
SHIMADA HIROSHI
| JPS5861461U | 1983-04-25 | |||
| JPS57207174A | 1982-12-18 | |||
| JPS5861461A | 1983-04-12 |
Next Patent: JPS6046369