To provide a static electricity capacity type sensor and a method for manufacturing the same by which the positional accuracy of an electrode is improved and a stable sensor property is obtained.

A chip 10 is provided in a second substrate layer with a hole 15 extending from the outer surface 13b to the position of a silicon oxide film layer 11. The oxide film layer 11 is removed in a necessary tip portion 15a of the hole 15 so that a space part 16 is formed in which the inner surface 12a of a first silicon substrate layer 12 is opposed to the inner surface 13a of a second silicon substrate layer 13. The first silicon substrate layer 12 is formed on the inner surface 12a with a first electrode layer 17, while a second electrode layer 18 is formed from the outer surface 13b of the second silicon substrate layer 13 to the inner peripheral surface 15b of the hole 15 further to the inner surface 13a of the second silicon substrate layer 13 so that the displacement of an interval between the first and second electrode layers 17 according to an object to be measured is detected through a change in a static electricity capacity.