Title:
STATIC ELECTRICITY DISCHARGE PROTECTION STRUCTURE
Document Type and Number:
Japanese Patent JPH06283673
Kind Code:
A
Abstract:
PURPOSE: To impart a high level resistance against electrostatic discharge with good reproducibility by providing a silicon controlled rectifier(SCR), and an N type or a P type well resistor connectible between the SCR and an electrostatically sensitive electric circuit. CONSTITUTION: An integrated circuit 10 incorporating an electrostatic discharge(ESD) protective structure 15 excellent in characteristics has a circuit structure 11 representative of the functional operation circuit of the integrated circuit 10. The ESD protective structure 15 is disposed between the circuit structure 11 and the contact pad 13 of the integrated circuit 10. The ESD protective structure 15 is a circuit comprising a SCR 17, and an N type well resistor 19 having first joint to the anode of the SCR 17 and a second joint to the circuit structure 11. The ESD protective structure 15 applied, respectively, to an input structure B, an output structure C and a lateral structure D is shown on the drawing.
Inventors:
BAANAADO JII KARUBAJIYARU ZA S
ROJIYAA EE KURAIN
AMITABA CHIYATSUTAAJII
TOMASU ERU PORUGURIIN
ROJIYAA EE KURAIN
AMITABA CHIYATSUTAAJII
TOMASU ERU PORUGURIIN
Application Number:
JP10329493A
Publication Date:
October 07, 1994
Filing Date:
April 28, 1993
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L27/04; H01L21/822; H01L27/02; (IPC1-7): H01L27/04
Attorney, Agent or Firm:
Akira Asamura (3 outside)