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Patent Searching and Data


Title:
STENCIL MASK AND EXPOSURE METHOD
Document Type and Number:
Japanese Patent JP2003031485
Kind Code:
A
Abstract:

To provide a method for allowing a large-area pattern to be subjected to complementary division without reducing the throughput.

A large-area pattern 50 where length and width are set to at least division reference length L is subjected to complementary division for dividing into line patterns 51, 52, 53, 54, and 55, where merely width is set to less than L and the length is set to at least L. At the boundary section of each line pattern subjected to the complementary division, an overlap region 57 is provided. Position precision in the entire pattern is not affected greatly even if the large-area pattern is divided into lines where the length is set to at least L (the width is L or less), thus suppressing the reduction of throughput simply by performing projection exposure twice when patterns A and B where lines are aligned alternately are subjected to complementary division.


Inventors:
KAWADA SHINTARO
Application Number:
JP2001219425A
Publication Date:
January 31, 2003
Filing Date:
July 19, 2001
Export Citation:
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Assignee:
NIKON CORP
International Classes:
G03F1/20; G03F7/20; H01J37/305; H01L21/027; (IPC1-7): H01L21/027; G03F1/16; G03F7/20; H01J37/305
Attorney, Agent or Firm:
Watanabe temperature (1 person outside)