Title:
蓄積型FINFET、回路、及びその製造方法
Document Type and Number:
Japanese Patent JP5373722
Kind Code:
B2
Abstract:
This description relates to a fin field-effect-transistor (FinFET) including a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one of a Ge, SiGe, or III-V semiconductor. The FinFET further includes a gate dielectric layer over the channel and a gate over the gate dielectric layer. The FinFET further includes a nitride spacer on the substrate adjacent the gate and an oxide layer between the nitride spacer and the gate and between the nitride spacer and the substrate.
Inventors:
Leaf leaf
Tomokatsu Zhang
Yukino Man
Tomokatsu Zhang
Yukino Man
Application Number:
JP2010194220A
Publication Date:
December 18, 2013
Filing Date:
August 31, 2010
Export Citation:
Assignee:
Taiwan Semiconductor Manufacturing Company,Ltd.
International Classes:
H01L21/336; H01L21/8238; H01L27/092; H01L29/78
Domestic Patent References:
| JP10223901A | ||||
| JP2003533050A | ||||
| JP5090573A |
Foreign References:
| WO2007046150A1 | ||||
| WO2006132172A1 |
Attorney, Agent or Firm:
Ken Ieiri