Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2019054171
Kind Code:
A
Abstract:
To provide a storage device that enables a breakage position of a memory cell to be highly resistant.SOLUTION: A storage device according to an embodiment comprises: a first conductive layer; a second conductive layer; a resistance change layer that is provided between the first conductive layer and the second conductive layer, and that has a first layer containing a semiconductor or a first metal oxide, and a second layer containing a second metal oxide; and a phase change layer provided at any one of a position between the first conductive layer and the resistance change layer and a position between the second conductive layer and the resistance change layer.SELECTED DRAWING: Figure 1
Inventors:
HAN YEFEI
MOROOKA SATORU
MOROOKA SATORU
Application Number:
JP2017178415A
Publication Date:
April 04, 2019
Filing Date:
September 15, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L27/10; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Takashita
Mitsuyuki Matsuyama
Akira Sudo
Masahiro Takashita
Mitsuyuki Matsuyama