Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2019054197
Kind Code:
A
Abstract:
To provide a storage device capable of operating at higher speed.SOLUTION: A storage device according to an embodiment includes a first and second resistance change elements. The first resistance change element includes a first terminal and second terminal and includes one of two different switchable resistors. The second resistance change element includes a third terminal connected to the first terminal of the first resistance change element, includes a fourth terminal, and includes one of two different switchable resistors. A first double gate transistor includes a fifth terminal connected to the second terminal of the first resistance change element, includes a sixth terminal, and includes a first gate connected to a first word line and a second gate connected to a second word line independent of the first word line. A second double gate transistor includes a seventh terminal connected to the fourth terminal of the second resistance change element, includes an eighth terminal, and includes a third gate connected to the first word line and a fourth gate connected to a third word line independent of the first and second word lines.SELECTED DRAWING: Figure 3
Inventors:
ITO YUICHI
Application Number:
JP2017178841A
Publication Date:
April 04, 2019
Filing Date:
September 19, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken