Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023121797
Kind Code:
A
Abstract:
To provide a storage device with fast operation speed.SOLUTION: A storage device has: a first and a second memory cells, a first and a second bit lines, a first and a second switches, and a sense amplifier. The sense amplifier has a first node and a second node. The first memory cell is electrically connected to the first node via the first bit line and the first switch, and the second memory cell is electrically connected to the second node via the second bit line and the second switch. The sense amplifier amplifies a potential difference between the first node and the second node. The first memory cell and the second memory cell have a transistor including an oxide semiconductor in a channel forming region.SELECTED DRAWING: Figure 3
Inventors:
ONUKI TATSUYA
NAGATSUKA SHUHEI
NAGATSUKA SHUHEI
Application Number:
JP2023104822A
Publication Date:
August 31, 2023
Filing Date:
June 27, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G11C11/4091; G11C7/06; H01L29/786; H10B12/00
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