Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023141966
Kind Code:
A
Abstract:
To provide a storage device that has a smaller area.SOLUTION: In a storage device, a memory pillar MP is formed in a memory area MA. In a laminate 52 of the memory pillar MP, a memory hole is formed by means of photo-lithography and anisotropic etching. The memory hole is positioned in an area in which the memory pillar is scheduled to be formed, and penetrates through insulators 71, SM2, 35, SM, 34 and 33, and conductors 65-62. A bottom of the memory hole is positioned in a conductor 61. A laminate is formed on a surface of the memory hole. A semiconductor 51 is formed on a surface of the laminate. A center of the memory hole is embedded by a core 50 since the core 50 is formed on a surface of the semiconductor, then a top part of the core is removed, and a semiconductor is formed there, and further an insulator 71 is formed on a top surface of the memory pillar. A support pillar HR that is formed in a lead-out region penetrates through each insulator, and extends along a top surface of the insulator 33 from a top surface of the insulator 71.SELECTED DRAWING: Figure 11
Inventors:
FUKUDA NATSUKI
IGUCHI SUNAO
IGUCHI SUNAO
Application Number:
JP2022048579A
Publication Date:
October 05, 2023
Filing Date:
March 24, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H10B43/27; H01L21/336
Attorney, Agent or Firm:
Patent Attorney Corporation Suzue Patent General Office
Previous Patent: Waterproof fastening structure of case body
Next Patent: Radio equipment, ground station equipment
Next Patent: Radio equipment, ground station equipment