Title:
記憶装置
Document Type and Number:
Japanese Patent JP6903483
Kind Code:
B2
Abstract:
A memory device which stores a large amount of data is provided. The memory device includes a first transistor, a second transistor, a third transistor, a first capacitor, a second capacitor, and first to third wirings. The first transistor includes an oxide semiconductor in a channel formation region, the second transistor includes silicon in a channel formation region, and the third transistor includes silicon in a channel formation region. The first capacitor is provided in the same layer as the first transistor. A region of the second capacitor and a region of the first capacitor overlap with each other. The thickness of a dielectric of the second capacitor is preferably larger than the thickness of a dielectric of the first capacitor.
Inventors:
Masami Endo
Application Number:
JP2017091326A
Publication Date:
July 14, 2021
Filing Date:
May 01, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; G11C11/405; H01L21/28; H01L21/336; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2015109433A | ||||
| JP2013236072A | ||||
| JP2012129512A | ||||
| JP2250349A |
Foreign References:
| US20150023090 |