Title:
STRAIN GAUGE AND STRAIN MEASUREMENT ASSEMBLY
Document Type and Number:
Japanese Patent JP2022042992
Kind Code:
A
Abstract:
To provide a semiconductor silicon strain gauge which is not affected by external fields and mobile ions.SOLUTION: A strain gauge 200 is provided, comprising a resistor 250 formed of a doped silicon material, a conductive shield 260, and an isolation element 270 disposed between the resistor 250 and the conductive shield 260. The isolation element 270 electrically isolates the resistor 250 from the conductive shield 260.SELECTED DRAWING: Figure 3
Inventors:
JAMES HOFFMAN
DAVID ERIC WAGNER
KIM YOUNG-DEOK
DAVID ERIC WAGNER
KIM YOUNG-DEOK
Application Number:
JP2021140802A
Publication Date:
March 15, 2022
Filing Date:
August 31, 2021
Export Citation:
Assignee:
MEASUREMENT SPEC INC
TYCO ELECTRONICS AMP KOREA CO LTD
TYCO ELECTRONICS AMP KOREA CO LTD
International Classes:
G01B7/16; G01L1/18
Domestic Patent References:
| JPH0972805A | 1997-03-18 | |||
| JPH10160610A | 1998-06-19 | |||
| JPH07162018A | 1995-06-23 | |||
| JP2002162303A | 2002-06-07 | |||
| JP2019002781A | 2019-01-10 | |||
| JP2007324566A | 2007-12-13 | |||
| JPH05206482A | 1993-08-13 | |||
| JP2015011013A | 2015-01-19 |
Foreign References:
| WO2017006840A1 | 2017-01-12 | |||
| WO2017056673A1 | 2017-04-06 | |||
| US20060021420A1 | 2006-02-02 | |||
| US4658279A | 1987-04-14 | |||
| US20060214202A1 | 2006-09-28 |
Other References:
俵木 紀明 NORIAKI TAWARAGI: "高温用シリコン圧力センサ High-Temperature Silicon Pressure Sensor", 横河技報 ＶＯＬ．３６ ＮＯ．４ YOKOGAWA TECHNICAL REPORT, vol. 第36巻, JPN6023014238, 20 October 1992 (1992-10-20), JP, pages 153 - 156, ISSN: 0005034172
Attorney, Agent or Firm:
Oba Mitsuru
Miyuki Horikawa
Yukako Otake
Seiko Yamashita
Miyuki Horikawa
Yukako Otake
Seiko Yamashita