Title:
歪量子井戸構造の構造解析方法およびその記録媒体
Document Type and Number:
Japanese Patent JP3582776
Kind Code:
B2
Inventors:
Matsuyuki Ogasawara
Application Number:
JP19137499A
Publication Date:
October 27, 2004
Filing Date:
July 06, 1999
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
G01N23/207; (IPC1-7): G01N23/207
Domestic Patent References:
| JP8043328A |
Other References:
P.Grodzinski 他3名,“Investigation of InxGa1-xAs/GaAs strained QW structures grown on non-planar substrates by MOCVD”,Jounal of Crystal Growth,1991年,Vol.107,pp.583-590
D.Zhou, B.F.Usher,“X-ray diffraction simulation of strained InGaAs/AlGaAs MQW grown by MBE”,Proceedings Conf. on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000 ,2000年12月,pp.210-213
D.Zhou, B.F.Usher,“X-ray diffraction simulation of strained InGaAs/AlGaAs MQW grown by MBE”,Proceedings Conf. on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000 ,2000年12月,pp.210-213
Attorney, Agent or Firm:
Shinichi Kawakubo