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Title:
構造制御されたカーボンナノウォール、及びカーボンナノウォールの構造制御方法
Document Type and Number:
Japanese Patent JP4662067
Kind Code:
B2
Abstract:
Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface area and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm 2 /cm 2 -substrate·µm or more; (2) a carbon nanowall, characterized by having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm -1 or less; and (3) a carbon nanowall, characterized by having not only a wall surface area of 50 cm 2 /cm 2 -substrate·µm or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm -1 or less.

Inventors:
Masaru Hori
Hiramatsu Mineo
Hiroyuki Kano
Toru Sugiyama
Yuichiro Hama
Application Number:
JP2006201927A
Publication Date:
March 30, 2011
Filing Date:
July 25, 2006
Export Citation:
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Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
Nagoya University
International Classes:
C01B31/02; B01J21/18; B01J32/00; H01M4/96
Domestic Patent References:
JP2005097113A
Foreign References:
WO2005021430A1
Other References:
S. KURITA, et al.,Raman spectra of carbon nanowalls grown by plasma-enhanced chemical vapor deposition,JOURNAL OF APPLIED PHYSICS,2005年,Vol.97, No.10 ,p.104320-1~104320-5
Genta SATO,et al.,Fast Growth of Carbon Nanowalls from pure Methaneusing Helicon Plasma-Enhanced Chemical Vapor Deposition,JapaneseJournal of Applied Physics,2006年 6月15日,Vol.45, No.6A,p.5210~5212
平松美根男 外,プラズマCVDを用いたカーボンナノウォールの成長,日本結晶成長学会誌,2005年,Vol.32, No.5,,p.371-376
Attorney, Agent or Firm:
Yusuke Hiraki
Ishii Teiji
Satoshi Fujita
Tsuruhiko Sekiguchi