To judge the presence of a twist distribution by subjecting a GaN type sample to X-ray diffraction measurement.
The GaN type sample is subjected to X-ray diffraction measurement to calculate an hkl profile for each of a plurality of selected different reflection indexes hkl. The angle of the reflection indexes hkl specified by the selected reflection indexes hkl and the surface of the sample is set to a face angle c and the scanning angle being the transverse axis of the hkl profile is divided by sinc while the transverse axis of the hkl profile is renormalized to /sinc to determine a renormalized hkl profile for each of a plurality of the selected reflection indexes hkl. Moreover, the face angle c is set to a range smaller than 60. A plurality of the renormalized hkl profiles are brought to a state that peak apexes are arranged to be superposed one upon another and, in the case where the peak broadening shapes of a plurality of the superposed renormalized hkl profiles coincide with each other, the peak broadening shape of the hkl profile is judged to be the peak broadening shape caused by the local twist distribution produced by the mosaic properties of a crystal.
Yasuyuki Tanaka
Hiroshi Matsumoto
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