PURPOSE: To reduce the number of predetermined bonding pad electrodes and to simplify a wire bonding step by forming wirings near to each other to be common of one or more layers of wirings in a structure that the wirings are connected to each other by wirings used also as bonding pads thereon and through holes formed in an intermediate insulating film interposed therebetween.

CONSTITUTION: In a semiconductor device having wirings formed as a plurality of layers, wirings 26, 27 near to each other to be common of at least one layer of wiring are connected to each other by a wiring 23 used also as a bonding pad 25 thereon and a through hole 29 formed in an intermediate insulating film 22' interposed therebetween. Thus, even of the number of lead electrodes is increased, the number of pad electrodes can be reduced, and an array of inner active elements for reducing a semiconductor chip area and an array of the pad electrodes can be formed. Further, since the chip area can be reduced, the number of chips obtained from a wafer of finite size can be increased. Since the number of wire bindings is reduced, a wire bonding step can be simplified.