PURPOSE: To eliminate a delay of electric signal for every finger and prevent a chip itself from being formed in a long and narrow shape in a field effect transistor having a gate electrode of multi-finger type.

CONSTITUTION: By installing a gate pad 3 in the center of a chip and taking out a gate finger 1 without passing from the pad 3 through a gate bus bar, a delay of electrical signal for every finger is eliminated. Also, by installing a multi-finger gate on both sides of the gate pad 3, the chip itself is prevented from being formed in a long and narrow shape. By this construction, a transistor without the delay of electrical signal every finger can be obtained and can handle higher frequency. Further, since the chip itself is not formed in the long and narrow shape, an assembly operation to a package can be improved.