Title:
置換シクロペンタジエニルコバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法
Document Type and Number:
Japanese Patent JP6808281
Kind Code:
B2
Abstract:
Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms); R 2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R 3 , R 4 and R 5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.
Inventors:
Naoyuki Koiso
Yuki Yamamoto
Hiroyuki Oike
Teppei Hayakawa
Yasushi Furukawa
Kenichi Tada
Yuki Yamamoto
Hiroyuki Oike
Teppei Hayakawa
Yasushi Furukawa
Kenichi Tada
Application Number:
JP2016239566A
Publication Date:
January 06, 2021
Filing Date:
December 09, 2016
Export Citation:
Assignee:
Tosoh Corporation
Sagami Central Chemical Research Institute
Sagami Central Chemical Research Institute
International Classes:
C07F19/00; C07F15/06; C23C16/18
Domestic Patent References:
| JP9235287A | ||||
| JP2010528183A |
Other References:
Attila Sisak,Silylations of α,β-unsaturated and aromatic carbonyl compounds with cobalt carbonyls,Journal of Organometallic Chemistry,1999年,586(1),48-53,ISSN 0022-328X