Title:
SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3455512
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for epitaxial growth thereon, having a AlxGayInzN (x+y+z=1, x>0, y, z≥0) film with a reduced dislocation density and can form a film with satisfactory characteristics thereon through epitaxial growth.
SOLUTION: A sapphire substrate main frame 21 as a base material is introduced into a CVD chamber 25, after stripe-shaped grooves 24 are formed on the sapphire substrate main frame. Then a film 26 consisting of AlxGayInzN (x+y+z=1, x>0, y, z ≥ zero) is grown epitaxially, in the transverse direction so as to embed grooves 24. As a result, the AlxGayInzN film 26 possesses a region with a low density of dislocation, on at least either side of a recess or a projection in stripe-shaped grooves 24.
Inventors:
Keiichiro Asai
Tomohiko Shibata
Yukinori Nakamura
Tomohiko Shibata
Yukinori Nakamura
Application Number:
JP2000344808A
Publication Date:
October 14, 2003
Filing Date:
November 13, 2000
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B25/02; C30B25/18; H01L21/205; H01L33/16; H01L33/32; H01L33/34; H01S5/323; (IPC1-7): H01L21/205; H01L33/00; H01S5/323
Domestic Patent References:
| JP2000156524A | ||||
| JP200153012A | ||||
| JP200157341A | ||||
| JP2000124500A | ||||
| JP2000331947A | ||||
| JP10125958A |
Attorney, Agent or Firm:
Kosaku Sugimura