Title:
SUBSTRATE FOR FORMING GASEOUS PHASE SYNTHETIC DIAMOND FILM AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3044944
Kind Code:
B2
Abstract:
PURPOSE: To provide the substrate for forming gaseous phase synthetic diamond film and the production thereof.
CONSTITUTION: (1) The substrate for forming gaseous phase synthetic diamond film whose surface is covered in an embedded state with the hyperfine particle diamond powder having 30-100&angst average grain diameter. (2) Production of the substrate for forming gaseous phase synthetic diamond film in which the grinded surface of the substrate is ground by ultrasonic wave in a sol. in which the hyperfine particle diamond powder having 30-100&angst average grain diameter is allowed to floated and dispersed. (3) Production of the substrate for forming gaseous phase synthetic diamond film in which the ground surface of the substrate is rubbed with the hyperfine particle diamond powder having 30-100&angst average grain diameter.
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Inventors:
Masao Murakawa
Sadao Takeuchi
Sadao Takeuchi
Application Number:
JP24121492A
Publication Date:
May 22, 2000
Filing Date:
August 18, 1992
Export Citation:
Assignee:
Masao Murakawa
Sadao Takeuchi
Mitsubishi Materials Corporation
Sadao Takeuchi
Mitsubishi Materials Corporation
International Classes:
C23C26/00; C30B29/04; (IPC1-7): C23C26/00; C30B29/04
Domestic Patent References:
| JP4241214A |
Attorney, Agent or Firm:
Kazuo Tomita (1 person outside)