Title:
SUBSTRATE HEATING METHOD
Document Type and Number:
Japanese Patent JPS60154610
Kind Code:
A
Abstract:
PURPOSE:To prevent generation of pin holes, cracks, inuniformity of surface temperature and reverse diffusion of Ga and to realize direct heating of substrate from the rear surface by using a metal silicide film as a protection film of the rear surface of compound semiconductor substrate crysta. CONSTITUTION:The layer including damaged part by mechanical grinding of GaAs substrate surface is removed by etching and W5Si3 film 8 is vacuum deposited by sputtering method on the rear surface of wafer 7. The GaAs wafer having completed pre-processing is placed in a growth chamber and it is irradiated with the As molecular beam for the growth of GaAlAs through temperature rise by heating. The tungsten silicide film is not damaged and does not result in separation of As from the GaAs wafer and reverse diffusion of Ga. The similar effect can also be obtained by using GaP, InP, InAs as a substrate and a silicide of nickel, cobalt, molybdenum and tantalum as the metal silicide.
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Inventors:
SAWADA YASUSHI
ISHIZAKA AKITOSHI
MORIOKA MAKOTO
KURODA TAKAROU
SHIRAKI YASUHIRO
ISHIZAKA AKITOSHI
MORIOKA MAKOTO
KURODA TAKAROU
SHIRAKI YASUHIRO
Application Number:
JP1006384A
Publication Date:
August 14, 1985
Filing Date:
January 25, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/28; H01L21/203; (IPC1-7): H01L21/26; H01L21/28
Attorney, Agent or Firm:
Akio Takahashi