Title:
SUBSTRATE HEATING SYSTEM
Document Type and Number:
Japanese Patent JP3042229
Kind Code:
B2
Abstract:
PURPOSE: To provide a highly efficient downsized substrate heating system for heating a substrate, e.g. a semiconductor wafer, in vacuum while introducing a specific material gas thus forming a thin film on the substrate in which high temperature heating can be carried out for a long time while controlling the heating temperature accurately and easily.
CONSTITUTION: A plurality of circular infrared lamps having different diameters are arranged concentrically on a same plane to form a planar heater 5 having circular profile similar to that of a substrate 4. The substrate 4 is heated from the atmospheric side through a heating window 2 closing a vacuum vessel 1 containing the substrate 4 airtightly at the open end face thereof thus making a relatively wide space of the substrate 4 available at the central part of a temperature measuring heater.
More Like This:
| JP2024046469 | plasma source |
| JP3073161 | [Title of Invention] Vacuum processing apparatus |
Inventors:
Shinji Kiyofuji
Hitoshi Shimizu
Hitoshi Shimizu
Application Number:
JP34295392A
Publication Date:
May 15, 2000
Filing Date:
December 24, 1992
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/205; C23C16/46; H01L21/22; H01L21/26; (IPC1-7): H01L21/205; C23C16/46
Domestic Patent References:
| JP562907A | ||||
| JP3296214A | ||||
| JP63186424A | ||||
| JP613324A | ||||
| JP5267179A | ||||
| JP3215670A | ||||
| JP6296292U |
Attorney, Agent or Firm:
Masaharu Shinobe