To provide a substrate for a light-emitting element which can emit light from a substrate side, and is reduced in defect.
A substrate 100 for a light-emitting element is equipped with a transparent substrate 10 which is transparent to light having a wavelength of 400 nm or longer and 600 nm or shorter, and a nitride-based compound semiconductor thin film 1c formed by being bonded to one main surface of the transparent substrate 10. When a thermal expansion coefficient of the transparent substrate in a direction perpendicular to the main surface of the transparent substrate is α1, and a thermal expansion coefficient of the nitride-based compound semiconductor thin film is α2, an expression that (α1-α2)/α2 is -0.5 or larger and 1.0 or smaller is satisfied. The transparent substrate does not react with the nitride-based compound semiconductor thin film 1c at 1,200°C or lower. The absolute refractive index of the transparent substrate 10 is preferably 60% or higher and 140% or lower of the absolute refractive index of the nitride-based compound semiconductor thin film.
COPYRIGHT: (C)2010,JPO&INPIT
NAKAMURA TAKAO
YOSHIMURA MASASHI
| JP2008010766A | 2008-01-17 | |||
| JP2008300562A | 2008-12-11 | |||
| JP2008277552A | 2008-11-13 | |||
| JP2007524224A | 2007-08-23 | |||
| JP2009531845A | 2009-09-03 | |||
| JP2007220899A | 2007-08-30 | |||
| JP2006140445A | 2006-06-01 |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
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