Title:
SUBSTRATE TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JP2017155292
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for a PEALD treatment, in which the energy of ions to incident on a wafer is drastically reduced, and in which the damage of a deposition film due to the implantation of ions is suppressed to execute a deposition process excellent in the surface quality.SOLUTION: A substrate treatment apparatus for feeding a material gas to a substrate so that the substrate is irradiated with a plasma thereby to perform a deposition process, comprises: a treatment vessel for accommodating a placing stand to place the substrate, hermetically; and a plasma source for producing a plasma in said treatment vessel. Said plasma source is equipped with a plasma production high frequency power source, and this power source is equipped with sheath potential lowering means for lowering the sheath potential of the plasma to be generated.SELECTED DRAWING: Figure 7
Inventors:
DENPO KAZUKI
Application Number:
JP2016040060A
Publication Date:
September 07, 2017
Filing Date:
March 02, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/52; C23C16/505; H01L21/31; H05H1/46
Attorney, Agent or Firm:
Tetsuo Kanamoto
Miaki Kametani
Koji Hagiwara
Naoki Ogita
Miaki Kametani
Koji Hagiwara
Naoki Ogita