基板処理装置、及び、搬送装置

Japanese Patent JP5853291

B2

This substrate treatment device is equipped with: a treatment chamber for holding multiple glass substrates, on each of which a multi-layer film, comprising any one of copper-indium, copper-gallium, or copper-indium-gallium is formed; a reaction tube that is formed so as to define the treatment chamber; a cassette that is configured so as to be insertable into the treatment chamber, arranges the primary surfaces of the multiple glass substrates so as to face each other at a predetermined distance, and has a pair of sidewalls which cover the outer primary surfaces of the outermost glass substrates among the arranged multiple glass substrates; a gas supply pipe for introducing a selenium-containing gas or a sulfur-containing gas into the treatment chamber; an exhaust tube for exhausting the atmosphere in the treatment chamber; a heating section that is provided so as to surround the reaction tube; and fans for forcibly convecting the atmosphere in the treatment chamber in the short-side direction of the multiple glass substrates at the respective primary surfaces of the multiple glass substrates.

Eisuke Nishitani
Kunii Yasuo
Toyoda and his group
Hidenari Yoshida
Mitsunori Ishizaka
Murakami Katsumi
Oyatsu Katsuyoshi
Honda Makoto

JP2013547228A

February 09, 2016

November 30, 2012

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Tokai High Temperature Industry Co., Ltd.

H01L31/18; H01L21/365; H01L31/0749

JP2006186114A

WO2010060646A1
WO2010055669A1

Fukuoka Masahiro
Aniya Setsuo
Toru Yui
Hitoshi Kiyono

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