To provide a substrate processing method and apparatus, which sufficiently processes a substrate surface while a usage of chemical is suppressed.
In initial chemical processing, a silicon oxide film is formed on the substrate surface Wf, and the substrate surface Wf is a hydrophilic face. In this initial chemical processing (time until time T1 elapses from time 0), a flow rate of hydrofluoric acid solution is suppressed to 510 (mL/min) and the usage of hydrofluoric acid is suppressed. Since the flow rate of hydrofluoric acid solution is increased to 1,530 (mL/min) and continuous chemical processing is performed at timing when at least part of a silicon layer of the substrate W is exposed by the initial chemical processing, the hydrofluoric acid solution covers the whole substrate surface Wf and etching removal of the silicon oxide film can be continued even if the silicon layer is exposed to part of the substrate surface Wf and a hydrophobic face is formed.
SANO KENICHI
IZUTA TAKASHI
ISHII HIROAKI
Ryose Uji