Title:
基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
Document Type and Number:
Japanese Patent JP7305013
Kind Code:
B2
Abstract:
To provide a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a program capable of increasing selectivity in selective growth while suppressing damage to the surface of an underlying layer.SOLUTION: A substrate processing method includes a processing sequence including a step of providing a substrate having, on its surface, an oxygen-free first underlayer, an oxygen-containing second underlayer, and an oxygen and nitrogen-free third underlayer having a protective film formed thereon, a step C of modifying the surface of the second underlayer so as to be fluorine-terminated by supplying a fluorine-containing gas to the substrate while the protective film is formed on the surface of the third underlayer in selective growth, and a step D of forming a film on the surface of the first underlayer by supplying a film-forming gas to the substrate while the surface of the second underlayer is modified.SELECTED DRAWING: Figure 4
Inventors:
Waseda Takayuki
Takashi Nakagawa
Kimihiko Nakatani
Idekai
Yoshitomo Hashimoto
Takashi Nakagawa
Kimihiko Nakatani
Idekai
Yoshitomo Hashimoto
Application Number:
JP2022137565A
Publication Date:
July 07, 2023
Filing Date:
August 31, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC Inc.
International Classes:
H01L21/318; C23C16/02; C23C16/42; H01L21/31
Domestic Patent References:
| JP2017112258A | ||||
| JP2017174919A | ||||
| JP2018117038A | ||||
| JP2017222928A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Setsuo Aniya
Setsuo Aniya