Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2022172753
Kind Code:
A
Abstract:
To provide a substrate processing method for controlling the shape of an opening formed by plasma etching.SOLUTION: A substrate processing method according to the present disclosure includes the steps of: preparing a substrate having a silicon-containing dielectric film on a substrate support; and generating a plasma from a process gas including a gas including hydrogen and fluorine and etching the silicon-containing dielectric film, the etching step includes a step of supplying the process gas into the chamber, an electric power supply step of supplying a first high-frequency signal for generating the plasma to the substrate support or the upper electrode, and a step of applying a first electrical bias to the upper electrode.SELECTED DRAWING: Figure 3
Inventors:
ORUI TAKATOSHI
SUDA RYUTARO
KIHARA YOSHIHIDE
TOMURA MAJU
KUMAGAI YOSHIE
SUDA RYUTARO
KIHARA YOSHIHIDE
TOMURA MAJU
KUMAGAI YOSHIE
Application Number:
JP2021078924A
Publication Date:
November 17, 2022
Filing Date:
May 07, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Mutsumi Sato
Otoya Ishiwata
Koichi Sawai
Kazumune Takamura
Otoya Ishiwata
Koichi Sawai
Kazumune Takamura
Previous Patent: JPWO2022172752
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