Title:
基板処理方法および基板処理装置
Document Type and Number:
Japanese Patent JP7285741
Kind Code:
B2
Abstract:
To provide a technique for preventing a lower layer from being etched to inside a layer located above it in a multilayer film.SOLUTION: In the substrate processing method, an etching process is performed for etching a multilayer film to a peripheral edge of a substrate in which the multilayer film including a first layer and a second layer located above the first layer is formed. The substrate processing method comprises first to fifth steps. In the first step, the substrate is held. In the second step, the rotation of the substrate around a rotation axis running along a vertical direction is started. In the third step, an etchant for etching the multilayer film is ejected from a nozzle and deposited on the substrate at a position which is a given width distant from the peripheral edge of the substrate. In the fourth step, determination is made about whether the first layer or a third layer directly under the multilayer film is exposed or not. If it is determined that the first layer or the third layer is exposed, a depositing position of the etchant is shifted toward the peripheral edge of the substrate.SELECTED DRAWING: Figure 8
Inventors:
Marten Paulin
Hiroaki Ishii
▲高▼岡 誠
Tsutomu Ohsuka
Tetsuya Emoto
Hiroaki Ishii
▲高▼岡 誠
Tsutomu Ohsuka
Tetsuya Emoto
Application Number:
JP2019158265A
Publication Date:
June 02, 2023
Filing Date:
August 30, 2019
Export Citation:
Assignee:
Screen Holdings Co., Ltd.
International Classes:
H01L21/306; C23F1/02; C23F1/08; H01L21/304; H01L21/308
Domestic Patent References:
| JP2017183492A | ||||
| JP2013179156A | ||||
| JP2015070018A | ||||
| JP2019054093A | ||||
| JP2019046939A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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