基板加工方法および基板加工装置

Japanese Patent JP6779486

B2

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device which allow a crystal substrate to be processed to be processed into a substrate containing a processing layer for obtaining a hollowed crystal substrate without crack.SOLUTION: The substrate processing method performs a first step for arranging laser light condensing means 12 for which aberration correction can be adjusted on a surface to be irradiated of a crystal substrate 20a to be processed, in a non-contact manner; and performs a second step for changing a light-condensing position Bf of laser light B in a circumferential direction and in a thickness direction of a part 20b to be hollowed of the crystal substrate 20a to be processed while condensing the laser light B and forming a processing layer 22 with deteriorated rupture strength to make a substrate 20C containing a processing layer. In the second step, aberration correction for the laser light condensing means 12 is adjusted so that a processing trace 22c generated in the light condensing position Bf of the laser light B extends along a crystal orientation of the crystal substrate 20a to be processed and does not extend along a different crystal orientation of the crystal substrate 20a to be processed, inside the crystal substrate 20a to be processed and in the vicinity of at least one surface of the crystal substrate to be processed.SELECTED DRAWING: Figure 2

Junichi Ikeno
Yohei Yamada
Hideki Suzuki
Rika Matsuo

JP2016215244A

November 04, 2020

November 02, 2016

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Saitama University
Shin-Etsu Polymer Co., Ltd.

B23K26/53; B23K26/046; B23K26/064; H01L21/304

JP2009202190A
JP2016107334A
JP2015123465A
JP2013147380A
JP2014188581A

Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu

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