To easily manufacture a thin semiconductor wafer in a relatively short time and improve a production yield rate.
A method of processing substrate includes the steps of: arranging a laser condensing unit 16 above a substrate 10 in a noncontact manner; irradiating a laser light onto a surface of the substrate 10 and condensing the laser light inside the substrate using the laser condensing unit 16; forming a two-dimensional interior reformed layer 12 inside the substrate 10 by relatively moving the laser condensing unit 16 and the substrate 10; forming at least one patterned reformed layer 36 on the side of the two-dimensional interior reformed layer 12 facing the laser condensing unit 16 and/or on an opposite side from the laser condensing unit 16 by relatively moving the laser condensing unit 16 and the substrate 10; exposing the patterned reformed layer 36 on the surface of the substrate 10; and etching the patterned reformed layer 36 and the two-dimensional interior reformed layer 12.
COPYRIGHT: (C)2011,JPO&INPIT
国司 洋介
鈴木 秀樹
信越ポリマー株式会社
Masakazu Ito
Toshikazu Takahashi
Toshio Takamatsu