Title:
SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3538634
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a semiconductor element which uses a novel substrate whose latice constant very much coincides with that of a GaN single crystal not only at a normal temperature but during heating in layer formation as well and also has a GaN single crystal layer having an extremely low through- dislocation.
SOLUTION: In this method of producing the semiconductor element, an AlN foundation layer is formed preferably 9-18 nm thick on a (La0.29Sr0.71)(Al0.65 Ta0.35) O3 substrate having a perovskite layer. Then, the GaN single crystal layer is epitaxially grown on the AiN foundation layer at a temperature of ≤1100°C.
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Inventors:
Sumiya, Masatomo
Fukuya, Toshiro
Yoshimura, Katsuhiko
Fukuya, Toshiro
Yoshimura, Katsuhiko
Application Number:
JP2000225122A
Publication Date:
June 14, 2004
Filing Date:
July 26, 2000
Export Citation:
Assignee:
Univ, Shizuoka
International Classes:
C30B29/24; C30B29/22; C30B29/38; H01L31/04; H01L31/10; H01L33/32; (IPC1-7): C30B29/22; C30B29/38; H01L31/04; H01L31/10; H01L33/00