Title:
SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2023112675
Kind Code:
A
Abstract:
To provide a substrate support and a plasma processing apparatus enabling improvement of efficiency of a low frequency side of bias electric power.SOLUTION: A substrate support is arranged in a processing container, and includes: an electrostatic chuck that is formed of dielectric material and has a first support surface for supporting a substrate, and includes, inside the electrostatic chuck, a first electrode and a second electrode in order from the first support surface side; and a base supporting the electrostatic chuck. The second electrode is arranged at a position where distance from the second electrode to the first support surface is equal to or less than distance from the second electrode to the base. A voltage for attracting the substrate is applied to the first electrode, and bias electric power is supplied to the second electrode.SELECTED DRAWING: Figure 1
Inventors:
ISHIKAWA SHINYA
HARIO DAIKI
SATO TAKAHIKO
NAGAI TSUTOMU
TSUDA TAKAFUMI
TOYODA KEIGO
HARIO DAIKI
SATO TAKAHIKO
NAGAI TSUTOMU
TSUDA TAKAFUMI
TOYODA KEIGO
Application Number:
JP2023008538A
Publication Date:
August 14, 2023
Filing Date:
January 24, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H01L21/683; H05H1/46
Attorney, Agent or Firm:
Sakai International Patent Office