SUBSTRATE TREATMENT APPARATUS

Japanese Patent JP3645492

B2

PROBLEM TO BE SOLVED: To increase uniformity of development line widths by transferring a substrate from an aligner to a reaction acceleration section with the progress of image dissection of resist being suppressed, for example, in an aligner and a development apparatus.
SOLUTION: In an interface station S3, disposed between a treatment station S2 for executing a development process or the like and the aligner S4, a reaction suppressing section 7 for cooling a substrate after exposure, for example, to about 10 to 15°C is installed. In the treatment station S2, the reaction acceleration section (heating section 31) for accelerating image dissection of resist is installed. If the wafer W after exposure is cooled by the reaction suppression section 7, the progress of image dissection of a resist is suppressed, Therefore, the wafer W can be transferred from the aligner S4 to the heating section 31 with the progress of image dissection of resist being suppressed, and a development progress can be carried out with uniform degree of progress for image dissection of the resist. As a result, variations in development line widths can be suppressed, and thereby the uniformity of the development line widths can be increased.

Takayuki Katano
Matsui Hideaki
Junichi Kitano
Suzuki Yo
Takehide Yamashita
Toru Aoyama
Hiroyuki Iwaki
Satoru Shimura
Masatoshi Deguchi
Kosuke Yoshihara

JP2001025266A

May 11, 2005

February 01, 2001

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東京エレクトロン株式会社

G03F7/30; B65G49/00; H01L21/027; H01L21/677; H01L21/68; (IPC1-7): H01L21/027; G03F7/30; H01L21/68

JP6163392A
JP8017724A
JP7297258A
JP8130173A
JP10172882A

Toshio Inoue
Mizuno Hiromi

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