To provide a substrate treatment method wherein the oxidation of a metal layer can be prevented and treating stages are simple and to provide a substrate treatment system.
An SiNx layer and an SiO2 layer are successively formed on a Cu wiring layer formed on a wafer and the SiO2 layer and the SiNx layer are dry etched using a resist layer as a mask. At this time, the SiO2 layer and the SiNx layer are etched at a time by dry etching (an etching stage S106), successively a resist cured layer formed on the surface of the residual resist layer is removed by using O2 plasma (a partially ashing stage S108) and finally the resist layer after the resist cured layer is removed and the etching residue formed on the side wall of a etched part are removed by a wet washing using chemicals (a washing stage S112).
SUEMASA TOMOKI
INASAWA KOICHIRO
MORI HIROYUKI
NIBUYA TAKAYUKI
