Title:
SUBSTRATE FOR VAPOR PHASE GROWTH AND ITS HEATING
Document Type and Number:
Japanese Patent JP3442935
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To attain efficient reception of thermal radiation from a heater by a substrate and uniform heating on the substrate, in vapor phase growth on light translucent and insulating material such as sapphire.
SOLUTION: Substrates 10 and 15 comprise a wafer 11 which is substantially transparent to radiation and a thin film, formed in close contact with one main surface of the wafer 11, as a substantial absorber to the radiation. Heat occurred in the thin film by the radiation is transmitted to the wafer 11, to heat the wafer 11. Otherwise, the substrates comprise an electrically insulating wafer 11 and a thin film, formed in close contact with one main surface of the wafer 11, having electrical conductivity. Heat occurred in the thin film by induction heating is transmitted to the wafer 11, to heat the wafer 11.
Inventors:
Takanobu Kamakura
Application Number:
JP22515996A
Publication Date:
September 02, 2003
Filing Date:
August 27, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/02; H01L21/205; H01L33/32; (IPC1-7): H01L33/00; H01L21/02; H01L21/205
Domestic Patent References:
| JP8213324A | ||||
| JP57208146A | ||||
| JP5742120A | ||||
| JP5961175A | ||||
| JP62128517A | ||||
| JP1025200A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)