SUBSTRATES JOINING METHOD AND SUBSTRATES JOINING DEVICE

Japanese Patent JP3848989

B2

PROBLEM TO BE SOLVED: To provide a surface activation joining technique capable of joining substrates composed of ionic crystals etc., for which surface activation joining has been heretofore difficult, to each other by low temperature treatment.
SOLUTION: The substrate joining device 10 for joining substrates 800a and 800b has: an irradiation chamber 100 into which the substrates 800a and 800b are transported; and a beam irradiation section 300 which prepares island-shaped metallic thin films by irradiating the surfaces to be joined of the substrates 800a and 800b with an inert gas ion beam or inert gas neutral atom beam and a metallic ion beam or metallic neutral atom beam in the irradiation chamber 100. The device joins the substrates to each other by surface activation via the metallic thin films.

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Tadatomo Suga
Mohammed Mathieu Howrader
Tomoyuki Abe

JP2003137882A

November 22, 2006

May 15, 2003

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Tadatomo Suga
Ayumi Industry Co., Ltd.

B23K20/00; B23K20/14; B23K20/24; B29C65/02; H01L25/065; H01L25/07; H01L25/18; B23K101/36; (IPC1-7): B23K20/00; B23K20/14; B23K20/24; B29C65/02; H01L25/065; H01L25/07; H01L25/18; //B23K101:36

JP63239174A
JP1178382A
JP5195204A
JP7100667A
JP10092702A
JP11226753A
JP61103685A
JP5024958A
JP2003109883A

高木秀樹,前田龍太郎,須賀唯知,金属膜中間層を用いた異種材料のウェハ常温接合,2001年度精密工学会秋季大会学術講演会講演論文集,日本,社団法人精密工学会,2001年 9月10日,607

Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii

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