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Title:
SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING METHOD
Document Type and Number:
Japanese Patent JP2019038764
Kind Code:
A
Abstract:
To provide a resist composition that shows reduced defects and has excellent sensitivity, LWR, and CDU in photolithography using high energy rays, and a patterning method using the composition.SOLUTION: The present invention provides a sulfonium compound represented by a formula (1). [Lis a divalent hydrocarbon group which may have a hetero atom-containing group; X is a divalent linking group; Z is a sulfonium cation group represented by formulae (1A)-(1C). (R-Rindependently represent a monovalent hydrocarbon group which may have a hetero atom-containing group; a dashed line is a bond to X; A is a single bond, methylene, carbonyl, sulfinyl, amino, O, S, ester or the like)].SELECTED DRAWING: None

Inventors:
藤原 敬之
三井 亮
大橋 正樹
谷口 良輔
長谷川 幸士
Application Number:
JP2017161031A
Publication Date:
March 14, 2019
Filing Date:
August 24, 2017
Export Citation:
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Assignee:
信越化学工業株式会社
International Classes:
C07C381/12; C07D327/08; C07D333/76; C07D339/08; C08F220/10; G03F7/004; G03F7/038; G03F7/039; G03F7/20; G03F7/32; H01L21/027
Attorney, Agent or Firm:
特許業務法人英明国際特許事務所