Title:
スルホニウム塩、レジスト組成物、及びパターン形成方法
Document Type and Number:
Japanese Patent JP6714533
Kind Code:
B2
Abstract:
The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion. The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1').
Inventors:
Takayuki Fujiwara
Ryo Mitsui
Kazuhiro Katayama
Ryo Mitsui
Kazuhiro Katayama
Application Number:
JP2017055526A
Publication Date:
June 24, 2020
Filing Date:
March 22, 2017
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C07C381/12; C07C309/08; C07C309/12; C07C309/30; C07D333/46; C07D335/02; C09K3/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
| JP2018035096A | ||||
| JP2012173479A | ||||
| JP2005115016A | ||||
| JP2014199357A | ||||
| JP2011006400A | ||||
| JP2014122204A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi