Title:
SUPER LUMINESCENT DIODE
Document Type and Number:
Japanese Patent JP2769408
Kind Code:
B2
Abstract:
PURPOSE: To provide a super luminescent diode which has a performance not lower them that of the conventional super luminescent diode with shorter element length, smaller area and excellent manufacturing reproducibility.
CONSTITUTION: On a semiconductor substrate 1 of one conductivity type, a bottom clad layer 2 and an activating layer 3 of the same conductivity type as the substrate and top clad layers 4 and 7 of the opposite conductivity type are formed and a super luminescent diode is constituted. In the top clad layer 2, a current blocking layer 5, which has the same conductivity type as the substrate 1, has the same or small band gap energy compared with the activating layer 3 with the same or larger refraction factor compared with the activating layer, is provided except on a rectangular current injecting area 13.
Inventors:
Masato Inougami
Tatsuo Yamauchi
Yukio Shakuda
Tatsuo Yamauchi
Yukio Shakuda
Application Number:
JP24466092A
Publication Date:
June 25, 1998
Filing Date:
September 14, 1992
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L33/10; H01L33/14; H01L33/28; H01L33/30; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
| JP5315640A | ||||
| JP63143882A |
Attorney, Agent or Firm:
Sui Kawamura (2 outside)
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