PURPOSE: To improve a withstand voltage property by providing the constitution, wherein a second conductivity type conductor is laminated on a first conductivity type oxide superconductor so as to form a junction part, the second conductivity conductor is the gate, and the first conductivity type oxide superconductor includes the source, the drain and the above described junction part.
CONSTITUTION: A YBa2Cu3Oy layer, which is a P-type oxide superconductor 10, is laminated on a substrate 9, and a source and a drain are formed. Thus, a source electrode 12 and a drain electrode 13 are provided, respectively. A Nd2-xCexCuO4 layer, which is an N-type oxide superconductor, is formed on the oxide superconductor 10. The superconductor becomes a gate 11. A gate electrode 14 is formed, and a positive voltage is applied. At this time, the width of a space charge layer formed at the junction surfaces of the gate 11 and the oxide superconductor 10 is increased. The width of the space charge layer is changed based on the magnitude of the gate voltage. The distance between the gate and the drain can be set at the arbitrary magnitude by controlling the superconductive critical current. Thus, the withstand voltage can be improved.
| JPS63268087 | MEMORY MEDIUM |
| WO/2021/181059 | SUPERCONDUCTING DEVICE |
| JPS58223383 | MICRO-CONNECTOR FOR MOUNTING SUPERCONDUCTIVE ELEMENT |
ISHII TAKASHI
SUZUKI TAKESHI
OI AKIHIKO
TSUDA KOICHI
KOE KAZUO
