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Patent Searching and Data


Title:
SUPERCONDUCTING THIN FILM OF OXIDE
Document Type and Number:
Japanese Patent JPH02267121
Kind Code:
A
Abstract:

PURPOSE: To obtain a superconducting thin film of oxide having excellent mass productivity free from limitation of use caused by shape and critical current density in forming a superconducting thin film of oxide having a specific composition on a single crystal silicon wafer by laying a CaOxFy-based compound as an intermediate layer between the superconducting thin film of oxide and the single crystal silicon wafer substrate.

CONSTITUTION: A film of a compound shown by the formula CaOxFy (x≤0.2, 1.6≤y≤2) is formed in 400-500nm thickness by reaction metallizing method on a single crystal silicon wafer substrate. A superconducting thin film of Bi-M- Cu-O-based or Bi-Pb-M-Cu-O-based oxide is formed on the film by molecular beam epitaxial method (in the formula, M is alkaline earth metal). Enlargement in diameter, high critical current density and restriction of barrier of grain boundary can be controlled and a superconducting thin film of oxide having excellent mass productivity can be produced at low cost.


Inventors:
Natori, Eiji
Application Number:
JP1989000087411
Publication Date:
October 31, 1990
Filing Date:
April 06, 1989
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
C01G29/00; C01G1/00; H01B12/06; H01L39/24; (IPC1-7): C01G29/00; H01L39/24