Title:
SUPERCONDUCTING TRANSISTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3413701
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a superconducting transistor which has good controllability in the thickness of a semiconductor channel portion and a sufficiently high mechanical strength and which is suitable for higher integration, and manufacture thereof.
SOLUTION: An SOI structure is provided in which an island-like Si single crystal channel portion 14 having a thickness of about 100nm is buried in a recessed form on the surface of an insulating layer 12 on an Si substrate 10 as a holding substrate 10 having a sufficient thickness. On the lower side of the Si single crystal channel portion 14, a gate electrode 18 is formed via a gate insulating film 16. That is, the Si single crystal channel portion 14 and the gate electrode 18 with the gate electrode 16 provided between them are buried in the insulating layer 12 on the Si substrate 10. Also, a superconducting source electrode 22 and a superconducting drain electrode 24 which are connected respectively to the upper side of the Si single crystal channel portion 14 are arranged at a spacing of about 200nm.
Inventors:
Mikio Mukai
Application Number:
JP7717396A
Publication Date:
June 09, 2003
Filing Date:
March 29, 1996
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L39/22; H01L21/02; H01L27/00; H01L27/12; H01L29/786; H01L39/24; (IPC1-7): H01L39/22; H01L27/12; H01L29/786; H01L39/24
Domestic Patent References:
| JP5326963A | ||||
| JP60223175A | ||||
| JP6175575A |
Attorney, Agent or Firm:
Kuninori Funabashi
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